Invited column-“Infrared semiconductor laser”
2018, 47(5): 503001.
doi: 10.3788/IRLA201847.0503001
2m InGaSb/AlGaAsSb single quantum well(SQW) laser with low threshold current density of~131 A/cm2 and its ideality factor n was presented. The ideality factors n of the central p-n junction and the n-GaSb/metal junction sum up to be the total ideality factor n of the laser. The total ideality factor n decreases from 4.0 to 3.3 when the temperature was increased from 20 to 80℃. The results are in good agreement with the applied theoretical model as well as the ideality factor n of the individual GaSb-based junctions(p-n junction, GaSb/metal junction etc.).
2018, 47(5): 503002.
doi: 10.3788/IRLA201847.0503002
Antimonide materials are the ideal system for the semiconductor photoelectric materials and devices of 2-4 m due to its narrow bandgap. In recent years, great progress has been made in the research of antimonide high-power semiconductor lasers at home and abroad, and the room temperature operation of high-power single-tube and array lasers has been achieved. However, due to the incompatibility of antimonide materials with common fabrication technique of semiconductor single-mode lasers, only a few research institutes and companies have mastered the preparation of antimonide single-mode lasers. In this paper, the basic principle of the laterally coupled distributed feedback laser was introduced and the key technologies of the laser were briefly analyzed. The design scheme and preparation technology of the antimony single mode laser were also reviewed and summarized.
2018, 47(5): 503003.
doi: 10.3788/IRLA201847.0503003
2 m GaSb-based high power semiconductor laser has a promising prospect in many fields, such as gas detection, medical cosmetology and laser processing. The structure development of 2 m GaSb-based high power semiconductor laser based on power improvement was reviewed and discussed, the current research situation at home and abroad was introduced, and the principal technical issues in power and efficiency improvement were discussed. Two new structures introduced in traditional lasers in this field were introduced in detail, and their technical advantages were analyzed. It also pointed out the current 2 m GaSb-based high power semiconductor lasers were facing bottlenecks, and their development trends were discussed.
